The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Mar. 20, 2015
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventors:
Zhenqiang Ma, Middleton, WI (US);
Jung-Hun Seo, Madison, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 21/304 (2013.01); H01L 29/0653 (2013.01); H01L 29/66522 (2013.01); H01L 29/66772 (2013.01); H01L 29/78654 (2013.01); H01L 29/78681 (2013.01);
Abstract
Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors include a trench cut into the layer of semiconductor that makes up the body of the transistors. Trench separates the source and drain regions and determines the channel length of the transistor.