The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Aug. 19, 2014
Boe Technology Group Co., Ltd., Beijing, CN;
Jingfei Fang, Beijing, CN;
Chunsheng Jiang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present invention discloses a thin film transistor, a method of manufacturing the thin film transistor, a display substrate and a display apparatus. The method comprising steps of: forming an active material layer on a substrate; forming an etch barrier material layer on the active material layer, wherein the etch barrier material layer being made of a conductive material capable of blocking a source and drain etching liquid; forming an active layer pattern and an initial etch barrier layer pattern by performing a single patterning process on the active material layer and the etch barrier material layer, wherein the initial etch barrier layer pattern comprising a first region, a second region and a third region, the first region and the third region being regions for forming a source and a drain, respectively, the second region being a region of the initial etch barrier layer pattern except the first and third regions; forming the source and the drain in the first region and the third region, respectively, by a patterning process; converting the conductive material in the second region of the initial etch barrier layer pattern into an insulation material by an annealing process, so as to form an etch barrier layer.