The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Oct. 06, 2014
Denso Corporation, Kariya, Aichi-pref., JP;
Kenta Gouda, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
An insulated gate bipolar transistor includes: a drift layer having a semiconductor substrate with N-type conductivity; a collector layer having P-type conductivity at a surface layer of the semiconductor substrate at a back surface side; and a field stop layer between the drift layer and the collector layer that has a higher impurity concentration than the drift layer. In a thickness direction of the semiconductor substrate, a lifetime control layer is arranged with a predetermined half value width by helium ion implantation; and the field stop layer is arranged with a predetermined half value width by hydrogen ion implantation. Further, a half value width region of the lifetime control layer and a half value width region of the field stop layer overlap each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile