The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Sep. 14, 2015
Applicant:
Stmicroelectronics S.a., Montrouge, FR;
Inventors:
Pascal Chevalier, Chapareillan, FR;
Didier Celi, Voiron, FR;
Jean-Pierre Blanc, Theys, FR;
Alain Chantre, Seyssins, FR;
Assignee:
STMICROELECTRONICS S.A., Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/82 (2006.01); H01L 29/737 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66242 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 29/66325 (2013.01); H01L 29/737 (2013.01); H01L 29/7378 (2013.01);
Abstract
The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.