The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Mar. 09, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Takaki Niwa, Kiyosu, JP;
Masayoshi Kosaki, Kiyosu, JP;
Takahiro Fujii, Kiyosu, JP;
Tohru Oka, Kiyosu, JP;
Yukihisa Ueno, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
An object is to provide a technique that suppresses decrease in the breakdown voltage of a protective element. There is provided a semiconductor device that comprises a vertical MOS transistor and a protective element. A first nitride semiconductor layer has a convex that is protruded toward a second nitride semiconductor layer. The convex has a top face placed at a position to overlap with at least part of an ohmic electrode of a second conductive type when viewed from a stacking direction of a stacked body. The thickness of the second nitride semiconductor layer in a portion which a bottom face of a trench is in contact with is greater than the thickness of the second nitride semiconductor layer in a portion which the top face of the convex is in contact with.