The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Aug. 09, 2014
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventors:
Yongping Ding, San Jose, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Xiaobin Wang, San Jose, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Assignee:
Alpha & Omega Semiconductor (Cayman), Ltd., Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/73 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0626 (2013.01); H01L 21/31144 (2013.01); H01L 29/402 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
A trench type power semiconductor device with improved breakdown voltage and UIS performance and a method for preparation the device are disclosed. The trench type power semiconductor device includes a first contact hole formed in a mesa in the active area and a second contact hole formed in a mesa in an active to termination intermediate area, where the first contact hole is deeper and wider than the second contact hole.