The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Jul. 09, 2015
O2micro, Inc., Santa Clara, CA (US);
Hamilton Lu, Los Angeles, CA (US);
Laszlo Lipcsei, Campbell, CA (US);
O2Micro, Inc., Santa Clara, CA (US);
Abstract
An integrated device includes a semiconductor well formed in an epitaxial layer, and a guard ring formed in the epitaxial layer and surrounding the semiconductor well. The semiconductor well and the guard ring include a type of semiconductor different from that of the epitaxial layer. The integrated device also includes an insulating layer formed atop the guard ring, and multiple gate electrodes formed on a top surface of the insulating layer, overlapping the guard ring and surrounding the semiconductor well. The gate electrodes include a first gate electrode and a second gate electrode separated by a gap. An intersecting line between the top surface of the insulating layer and a side wall of the first gate electrode partially overlaps an area that is defined based on an intersecting line between the top surface of the insulating layer and a side wall of the second gate electrode above the guard ring.