The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jun. 10, 2016
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Gijs Jan De Raad, Bemmel, NL;

Guido Wouter Willem Quax, Utrecht, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0285 (2013.01); H01L 27/0292 (2013.01); H01L 29/7436 (2013.01);
Abstract

A silicon controlled rectifier, an electrostatic discharge (ESD) protection circuit including the silicon controlled rectifier and an integrated circuit including the silicon controlled rectifier or ESD protection circuit. The silicon controlled rectifier includes a first region having a first conductivity type and a second region having a second conductivity type located adjacent the first region in a semiconductor substrate. A junction is formed at a boundary between the first region and the second region. Contact regions of the first conductivity type and the second conductivity type located in each of the first region and the second region. A further contact region of the second conductivity type is located in the second region, in between the contact region of the first conductivity type and the junction. The further contact region and the contact region of the second conductivity type in the second region are connected together for biasing the second region.


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