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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9704840 B1

PDFFull Text
Date of Patent:
Jul. 11, 2017

Filed:

Aug. 02, 2016

Optical semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Isamu Nishimura, Kyoto, JP;

Makoto Murata, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

David Vu

Assistant Examiner:

Brandon Fox

Int. Cl.
CPC ...
H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 25/16 (2006.01); H01L 33/62 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 31/153 (2006.01); H01L 25/00 (2006.01); G01S 7/481 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); G01S 7/481 (2013.01); H01L 25/50 (2013.01); H01L 31/12 (2013.01); H01L 31/125 (2013.01); H01L 31/153 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2933/0033 (2013.01);
Abstract

The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device Aof the present invention includes: a substrateincluding a semiconductor material, and including a main surfaceand a back surfacea semiconductor light-emitting elementA at the substrate; a semiconductor light-receiving elementB at the substrate; a conductive layerconducting the semiconductor light-emitting elementA and the semiconductor light-receiving elementB; and an insulating layerbetween at least a portion of the conductive layerand the substrate; wherein the substrateincludes a recessrecessed from the main surfaceand including a bottom surfaceA of a light-emitting side recess where the semiconductor light-emitting elementA is disposed, and a bottom surfaceB of a light-receiving side recess where the semiconductor light-receiving elementB is disposed; a light-emitting side transparent portionA for light from the semiconductor light-emitting elementA to pass through the bottom surfaceA of the light-emitting side recess to the back surfaceand a light-receiving side transparent portionB for light from the back surfaceto pass through the bottom surfaceB of the light-receiving side recess to the semiconductor light-receiving elementB.

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