The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
May. 21, 2010
Applicants:
Akira Hatai, Chiyoda-ku, JP;
Shizuri Tamura, Chiyoda-ku, JP;
Inventors:
Akira Hatai, Chiyoda-ku, JP;
Shizuri Tamura, Chiyoda-ku, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/64 (2006.01); H01L 25/18 (2006.01); H01L 25/07 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 25/074 (2013.01); H01L 23/49805 (2013.01); H01L 23/49844 (2013.01); H01L 23/552 (2013.01); H01L 23/645 (2013.01); H01L 25/18 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30107 (2013.01);
Abstract
A transistor chip formed from a wide band gap semiconductor, on which transistor elements for an upper arm are formed is mounted on a front surface of an insulating substrate. A transistor chip formed from a wide band gap semiconductor, on which transistor elements for a lower arm are formed is mounted on a rear surface of the insulating substrate.