The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9704830 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 11, 2017

Filed:

Jan. 13, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen P. Ayotte, Bristol, VT (US);

Glen E. Richard, Burlington, VT (US);

Timothy M. Sullivan, Essex, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/02 (2006.01); H01L 25/065 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/562 (2013.01); H01L 25/50 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06551 (2013.01);
Abstract

A semiconductor structure in the form of a die comprises a silicon-containing core having a first surface, an opposite second surface and a peripheral edge surface. A circuit structure on the first surface is circumscribed by a peripheral crackstop structure which stops short of the second surface, thereby leaving an accessible portion of the peripheral edge surface free of the crackstop structure. One or more angular or orthogonal edge connector through-silicon conductive vias ('edge connector TSVs') connect the circuit structure to the accessible portion of the peripheral edge surface without penetrating the crackstop structure. A method of making the structure includes forming the edge connector TSVs in the silicon wafer from which the semiconductor structures, i.e., dies, are cut.


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