The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Sep. 05, 2008
Applicants:

Gareth J. Knowles, Willimasport, PA (US);

Lindsay Quarrie, Socorro, NM (US);

Inventors:

Gareth J. Knowles, Willimasport, PA (US);

Lindsay Quarrie, Socorro, NM (US);

Assignee:

QorTek, Inc., Williamsport, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/26 (2006.01); G06F 11/00 (2006.01); G08B 13/00 (2006.01); G08B 21/00 (2006.01); G08B 29/00 (2006.01); H01L 23/00 (2006.01); H05K 1/02 (2006.01); H01S 5/02 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/576 (2013.01); H05K 1/0274 (2013.01); H05K 1/0275 (2013.01); H01L 2924/0002 (2013.01); H01S 5/02 (2013.01); H01S 5/4025 (2013.01); H05K 2201/10121 (2013.01); H05K 2201/10151 (2013.01); H05K 2201/10689 (2013.01); H05K 2203/178 (2013.01);
Abstract

An apparatus, method and system for securing proprietary semiconductor IC components including a target semiconductor IC; at least one laser diode array disposed adjacent to the target semiconductor IC and coupled thereto; a power supply coupled to the at least one laser diode array; a sensor for sensing a predetermined parameter operatively coupled to the laser diode array through the power supply; wherein the sensor detects the existence of a predetermined event and as a result of the detection of the predetermined event activates the power supply and energizes the laser diode array, causing the laser diode array to project focused laser energy into the target semiconductor IC, damaging the target semiconductor IC.


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