The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Jan. 15, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventor:
Mattias E. Dahlstrom, Los Alto, CA (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/427 (2006.01); H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/373 (2006.01); H01L 49/02 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/36 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4275 (2013.01); H01L 21/0217 (2013.01); H01L 21/02118 (2013.01); H01L 21/02164 (2013.01); H01L 21/481 (2013.01); H01L 21/4817 (2013.01); H01L 21/4882 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76898 (2013.01); H01L 23/367 (2013.01); H01L 23/3675 (2013.01); H01L 23/3677 (2013.01); H01L 23/373 (2013.01); H01L 23/3735 (2013.01); H01L 23/3736 (2013.01); H01L 23/427 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 24/80 (2013.01); H01L 28/24 (2013.01); H01L 23/36 (2013.01); H01L 23/522 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.