Methods of forming cmos based integrated circuit products using disposable spacers

Abstract

Disclosed herein is a method of forming a CMOS integrated circuit product (comprised of first and second opposite type transistors) that includes forming a first spacer proximate both the first and second gate structures, forming an initial second spacer proximate the first spacer of the first transistor and a layer of second spacer material above the second transistor, and forming first raised epi semiconductor material source/drain regions for the first transistor. Thereafter, performing a first surface oxidation process so as to selectively form a hydrophilic material on exposed surfaces of the first raised epi semiconductor material and performing an etching process on both the transistors so as to remove the initial second spacer and the layer of second spacer material.