The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
May. 23, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Shunsuke Yamada, Osaka, JP;
Tetsuya Hattori, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to expose a contact region, which is a portion of a main surface of the substrate. The step of forming the contact hole includes a step of providing the contact region with a surface roughness Ra of not less than 0.5 nm. An electrode layer is formed in contact with the contact region. By heating the electrode layer and the substrate, siliciding reaction is caused between the electrode layer and the contact region.