The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Dec. 21, 2012
Applicant:
Toray Industries, Inc., Tokyo, JP;
Inventors:
Assignee:
TORAY INDUSTRIES, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/426 (2006.01); G03F 7/075 (2006.01); G03F 7/038 (2006.01); G03F 7/004 (2006.01); G03F 7/022 (2006.01); G03F 7/023 (2006.01); G03F 7/027 (2006.01); G03F 7/032 (2006.01);
U.S. Cl.
CPC ...
H01L 21/426 (2013.01); G03F 7/0045 (2013.01); G03F 7/0047 (2013.01); G03F 7/022 (2013.01); G03F 7/027 (2013.01); G03F 7/0233 (2013.01); G03F 7/032 (2013.01); G03F 7/038 (2013.01); G03F 7/0388 (2013.01); G03F 7/0757 (2013.01);
Abstract
Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.