The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Nov. 17, 2015
Hyunchang Lee, Gwangmyeong-si, KR;
Boo-hyun Ham, Yongin-si, KR;
Yongkug Bae, Hwaseong-si, KR;
Ja-min Koo, Hwaseong-si, KR;
Jonghwa Baek, Yongin-si, KR;
Heeju Shin, Yongin-si, KR;
Rankyung Jung, Incheon, KR;
Hyunchang Lee, Gwangmyeong-si, KR;
Boo-Hyun Ham, Yongin-si, KR;
Yongkug Bae, Hwaseong-si, KR;
Ja-Min Koo, Hwaseong-si, KR;
Jonghwa Baek, Yongin-si, KR;
Heeju Shin, Yongin-si, KR;
Rankyung Jung, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.