The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Jul. 09, 2015
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); C23C 16/24 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02579 (2013.01); C23C 16/24 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/3065 (2013.01); H01L 21/32135 (2013.01);
Abstract
A method for forming a film on a substrate is provided. The method includes positioning a substrate within a processing volume of a process chamber and heating the substrate. The method further includes forming a semiconductor film on the substrate by exposing the substrate to two or more reactants including a silicon source and a halogenated dopant source. The semiconductor film includes one or more epitaxial regions and one or more non-epitaxial regions.