The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Jan. 20, 2015
Showa Denko K.k., Tokyo, JP;
Kazumi Naito, Tokyo, JP;
Katsutoshi Tamura, Tokyo, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
The present invention provides a method for producing a capacitor element having good LC characteristics, wherein, after a chemical conversion process to form a dielectric layer on the surface layer of an anode body obtained by forming a powder mainly comprising tungsten, followed by sintering, a semiconductor layer and a conductor layer are sequentially formed on the dielectric layer; an etching process is conducted before forming the dielectric layer to remove a natural oxide film formed on the surface layer on the outer surface and on the surface inside the pores of the anode body so as to adjust the film thickness to a range of 0.5 to 5.0 nm; and the chemical conversion process is conducted at a temperature from −4 to 18° C. for 7 to 110 minutes after reaching a predetermined voltage.