The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Dec. 29, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Won-bo Shim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G06F 11/1068 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 29/52 (2013.01);
Abstract
A method for operating a non-volatile memory device initially includes supplying an erase voltage to the memory cells. The memory cells are in cell strings in a three-dimensional structure. The method further includes performing a first read operation of the memory cells, performing a second read operation of the memory cells, and then performing a first erase verify operation based on results of the first and second read operations. The first erase verify operation may include performing a first exclusive-or (XOR) operation on the first and second read operation results.