The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Sep. 08, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01C 11/34 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); G11C 16/12 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/12 (2013.01); G11C 16/16 (2013.01); G11C 16/34 (2013.01); G11C 16/3459 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract
An operating method of a nonvolatile memory, which includes a plurality of cell strings, each cell string having a plurality of memory cells and a string selection transistor stacked on a substrate, includes detecting threshold voltages of the string selection transistors of the plurality of cell strings; adjusting voltages to be supplied to the string selection transistors according to the detected threshold voltages; and applying the adjusted voltages to the string selection transistors to select or unselect the plurality of cell strings during a programming operation.