The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jul. 13, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Do-Kyun Kim, Seongnam-si, KR;

Dong-Yang Lee, Yongin-si, KR;

Kwang-Hyun Kim, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01); G11C 11/56 (2006.01); G11C 11/4096 (2006.01); G11C 11/4094 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/565 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01);
Abstract

A method of operating a memory device includes writing cell data having one of at least three states to a memory cell; amplifying a voltage level of a bit line connected to the memory cell; determining that the cell data is in a first state when the voltage level of the bit line sensed at a sensing point is equal to or greater than a first reference voltage; determining that the cell data is in a second state when the voltage level of the bit line sensed at the sensing point is equal to or less than a second reference voltage which has a lower voltage level than the first reference voltage; and determining that the cell data is in a third state when the cell data is not in the first or second states.


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