The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jul. 14, 2015
Applicants:

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;

Technische Universitaet Ilmenau, Ilmenau, DE;

Inventors:

Frank Klefenz, Mannheim, DE;

Peter Husar, Ilmenau, DE;

Adam Williamson, Ilmenau, DE;

Lars Schumann, Ilmenau, DE;

Lars Hiller, Rudolstadt, DE;

Ingo Hoerselmann, Ilmenau, DE;

Andreas Schober, Erfurt, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06N 3/063 (2006.01); G06N 3/04 (2006.01); G11C 11/54 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G06N 3/04 (2013.01); G06N 3/063 (2013.01); G06N 3/0635 (2013.01); G11C 11/54 (2013.01); G11C 13/0007 (2013.01); H01L 27/2436 (2013.01); H01L 45/08 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/165 (2013.01); G11C 2213/52 (2013.01);
Abstract

Embodiments of the present invention provide a memristor having a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.


Find Patent Forward Citations

Loading…