The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jun. 23, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Ai Furubayashi, Kasukabe, JP;

Takashi Obara, Yokohama, JP;

Takaki Hashimoto, Yokohama, JP;

Nobuhiro Komine, Nagoya, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/42 (2012.01); G03F 1/84 (2012.01); G06F 17/50 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 1/38 (2012.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G03F 1/38 (2013.01); G03F 1/70 (2013.01); G03F 1/84 (2013.01); G03F 7/2022 (2013.01); G03F 7/32 (2013.01); G06F 17/5081 (2013.01);
Abstract

According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.


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