The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Sep. 25, 2014
Applicant:
National Institute for Materials Science, Ibaraki, JP;
Inventors:
Assignee:
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Ibaraki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/091 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/0278 (2013.01);
Abstract
A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layerwith a thickness as small as a nanometer level is provided on a resist polymer layerformed on a substrate. When the resist layer in this structure is exposed to light, the metal layerproduces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.