The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Nov. 28, 2013
Nec Corporation, Minato-ku, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
Shigeki Takahashi, Tokyo, JP;
NEC CORPORATION, Tokyo, JP;
Abstract
Provided is a silicon-based electro-optic modulator which is small in size and capable of high speed operation. A first silicon semiconductor layer () doped to exhibit a first type of conductivity and a second semiconductor layer () doped to exhibit a second type of conductivity are at least partly stacked together, and a relatively thin dielectric () is formed at the interface between the stacked first and second silicon semiconductor layers (). The first silicon semiconductor layer () has a rib waveguide shape () comprising a rib portion () and slab portions (). A first heavily doped region () formed by a high concentration doping process is arranged at a location, in the first silicon semiconductor layer (), neighboring to each of the slab portions (). The first heavily doped region () has almost the same height as that of the rib portion () of the rib waveguide ().