The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Nov. 10, 2014
Applicant:

Seoul Semiconductor Co., Ltd., Ansan-si, KR;

Inventors:

Jacob J. Richardson, Goleta, CA (US);

Evan C. O'Hara, Goleta, CA (US);

Daniel Estrada, Goleta, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/04 (2006.01); C30B 19/00 (2006.01); C30B 29/16 (2006.01); C25D 7/12 (2006.01); H01L 21/02 (2006.01); C30B 7/00 (2006.01); C30B 29/10 (2006.01); C23C 18/12 (2006.01); C23C 18/16 (2006.01);
U.S. Cl.
CPC ...
C30B 7/04 (2013.01); C23C 18/125 (2013.01); C23C 18/1216 (2013.01); C23C 18/1245 (2013.01); C23C 18/1283 (2013.01); C23C 18/1651 (2013.01); C25D 7/123 (2013.01); C30B 7/00 (2013.01); C30B 19/00 (2013.01); C30B 29/10 (2013.01); C30B 29/16 (2013.01); H01L 21/02175 (2013.01); H01L 21/02282 (2013.01); H01L 21/02293 (2013.01);
Abstract

A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.


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