The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Apr. 07, 2014
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventor:

Kenji Kouno, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/16 (2006.01); H03K 17/082 (2006.01); H01L 27/06 (2006.01); H03K 17/567 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H01L 27/0652 (2013.01); H01L 27/0722 (2013.01); H01L 27/0727 (2013.01); H03K 17/0828 (2013.01); H03K 17/567 (2013.01);
Abstract

A semiconductor device includes: a diode-integrated IGBT element in a same semiconductor substrate having a diode element and an IGBT element driven by a drive signal towards a gate; a sense element having a diode sense element with a current proportional to a current through the diode element and an IGBT sense element with a current proportional to a current through the IGBT element; a switch element connected to a first current pathway through the diode sense element and to a second current pathway different from the first current pathway. The switch element is turned off to control the second current pathway to be discontinuous with the first current pathway when no current flows through the diode sense element, and is turned on to control the second current pathway to be continuous with the first current pathway and apply a current when a current flows through the diode sense element.


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