The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Jun. 08, 2015
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Kyoungsoo Lee, Seoul, KR;

Minho Choi, Seoul, KR;

Jinhyung Lee, Seoul, KR;

Gyeayoung Kwag, Seoul, KR;

Sangwook Park, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 21/3003 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750−31.8·T+(0.16)·T≦I. Here, T is the temperate (° C.) of the main processing process, and I is the light intensity (mW/cm) of the main processing process.


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