The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Mar. 16, 2016
Imec Vzw, Leuven, BE;
Globalfoundries Inc., Grand Cayman, KY;
Bartlomiej Pawlak, Leuven, BE;
Geert Eneman, Leuven, BE;
IMEC VZW, Leuven, BE;
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A vertical FinFET semiconductor device and a method of forming the same are disclosed. In one aspect, the semiconductor device includes a current-blocking structure formed over a semiconductor structure and a semiconductor fin formed on the current-blocking structure. The current blocking structure includes a first layer of a first conductive type, a layer of a second conductive type over the first layer, and a second layer of the first conductive type over the layer of the second conductive type. The semiconductor fin has a doped bottom portion contacting the current-blocking structure, a doped top portion formed vertically opposite to the doped bottom portion and a channel portion vertically interposed between the doped bottom portion and the doped top portion.