The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jul. 17, 2015
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 27/092 (2013.01); H01L 29/42368 (2013.01); H01L 29/7835 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 29/0653 (2013.01); H01L 29/1083 (2013.01); H01L 29/665 (2013.01);
Abstract
The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rby minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qfor an identical device pitch to that of an alternative technology.