The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Aug. 04, 2014
Su Zhou Oriental Semiconductor Co.,ltd, Suzhou, CN;
Wei Liu, Suzhou, CN;
Lei Liu, Suzhou, CN;
Xi Lin, Suzhou, CN;
Pengfei Wang, Suzhou, CN;
Yi Gong, Suzhou, CN;
SU ZHOU ORIENTAL SEMICONDUCTOR CO., LTD, Suzhou, CN;
Abstract
The present invention discloses a power Metal Oxide Semiconductor (MOS) transistor, wherein a second U-shaped trench is formed below a first U-shaped trench, so that a field oxidation stress transition region can be extended, so as to greatly reduce current leakage caused by the field oxidation stress and improve the reliability of the device; and a charge compensation region is provided in a drift region at the bottom of the second U-shaped trench, and a super-junction structure is formed between the charge compensation region and the drift region to improve the breakdown voltage of the power device. According to the present invention, the second U-shaped trench and the charge compensation region are formed by a self-aligning process, so that the technical process is simple, reliable and easy to control, and can reduce the manufacturing cost of the power MOS transistor and improve its yield.