The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Mar. 07, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Jinbum Kim, Seoul, KR;
Jaeyoung Park, Yongin-si, KR;
Donghun Lee, Daegu, KR;
Jeongho Yoo, Seongnam-si, KR;
Jieon Yoon, Hwaseong-si, KR;
Kwan Heum Lee, Suwon-si, KR;
Choeun Lee, Pocheon-si, KR;
Bonyoung Koo, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/12 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/3003 (2013.01); H01L 29/045 (2013.01); H01L 29/12 (2013.01); H01L 29/401 (2013.01); H01L 29/41766 (2013.01); H01L 29/42356 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.