The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Aug. 12, 2014
Applicant:
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/02197 (2013.01); H01L 21/02266 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01); H01L 29/78654 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/0649 (2013.01); H01L 29/0669 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract
The present invention provides a field-effect transistor having an accumulation-layer-operation type field-effect transistor that includes a semiconductor layer in which a source region, a channel region, and a drain region that have either an N-type or P-type conductivity in common are formed, and a gate electrode disposed adjacent to the channel region via a gate insulating film, wherein the gate insulating film is made of a dielectric having a change gradient of a relative dielectric constant in which the relative dielectric constant changes to decrease according to the magnitude of a gate voltage applied to the gate electrode.