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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9698231 B1

PDFFull Text
Date of Patent:
Jul. 04, 2017

Filed:

Feb. 03, 2016

Semiconductor devices

Applicants:

Hyun Namkoong, Seoul, KR;

Dong-kyum Kim, Suwon-si, KR;

Jung-hwan Kim, Seoul, KR;

Jung Geun Jee, Seoul, KR;

Han-vit Yang, Suwon-si, KR;

Ji-man Yoo, Yongin-si, KR;

Inventors:

Hyun Namkoong, Seoul, KR;

Dong-Kyum Kim, Suwon-si, KR;

Jung-Hwan Kim, Seoul, KR;

Jung Geun Jee, Seoul, KR;

Han-Vit Yang, Suwon-si, KR;

Ji-Man Yoo, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., , KR;

Attorney:

Renaissance IP Law Group LLP

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 27/11519 (2017.01); H01L 27/11521 (2017.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 29/42324 (2013.01); H01L 29/42344 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01); H01L 29/7926 (2013.01);
Abstract

A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.

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