The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jun. 21, 2016
Sanken Electric Co., Ltd., Saitama, JP;
Ryohei Baba, Saitama, JP;
Toru Yoshie, Saitama, JP;
Tomonori Hotate, Saitama, JP;
Yuki Tanaka, Saitama, JP;
KYOCERA Document Solutions Inc., Osaka, JP;
Abstract
A semiconductor device of trench gate type is provided that has achieved both large on-current and high off-state breakdown voltage. Around trench T and between it and electric field relaxation p-layer, low resistance n-layeris provided. Low resistance n-layeris formed deeper than trench T, and shallower than electric field relaxation p-layer, being connected to n-layer (drift layer)just thereunder, and thus low resistance n-layerand n-layerare integrated to form a drift layer. Although low resistance n-layeris n-type as is n-layer, donor concentration thereof is set higher than that of n-layer, thereby low resistance n-layerhaving a resistivity lower than that of n-layer. This low resistance n-layeris provided in on-current path (between electric field relaxation p-layerand trench T), whereby low resistance n-layercan lower the resistance to on-current.