The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
May. 05, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Nam-Yeal Lee, Gyeonggi-do, KR;
Seung-Jin Yeom, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/764 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/5222 (2013.01); H01L 23/5329 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 23/53271 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a dielectric structure which has an opening exposing a surface of a substrate; and a conductive structure which is formed in the opening, wherein the conductive structure comprises: a first conductive pattern recessed in the opening; a second conductive pattern covering a top surface and sidewalls of the first conductive pattern; an air gap defined between sidewalls of the opening and the second conductive pattern; and a third conductive pattern capping the second conductive pattern and the air gap.