The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Apr. 08, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ha-Young Kim, Seoul, KR;

Jin Tae Kim, Daejon, KR;

Jae-Woo Seo, Seoul, KR;

Dong-yeon Heo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/768 (2006.01); G06F 17/50 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 21/76892 (2013.01); H01L 27/0207 (2013.01); H01L 21/823871 (2013.01); H01L 27/0629 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes providing pre-conductive lines and post-conductive lines for forming a first logic cell and a second logic cell, which are adjacent to each other, and a dummy cell and a third logic cell, which are adjacent to each other. A first conductive line, adjacent to the second logic cell, from among conductive lines of the first logic cell is spaced a first reference distance apart from a second conductive line, adjacent to the first logic cell, from among conductive lines of the second logic cell. A dummy line, which is adjacent to the third logic cell, from among conductive lines of the dummy cell is spaced a second reference distance apart from a third conductive line, which is adjacent to the dummy cell, from among conductive lines of the third logic cell. The second reference distance is greater than the first reference distance.


Find Patent Forward Citations

Loading…