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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9696628 B1

PDFFull Text
Date of Patent:
Jul. 04, 2017

Filed:

Mar. 11, 2016

Pattern forming method

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yusuke Kasahara, Kanagawa, JP;

Hideki Kanai, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); G03F 7/00 (2006.01); H01L 21/311 (2006.01); B81C 1/00 (2006.01); G03F 7/16 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); B81C 1/00031 (2013.01); G03F 7/002 (2013.01); G03F 7/0035 (2013.01); G03F 7/11 (2013.01); G03F 7/165 (2013.01); G03F 7/2016 (2013.01); H01L 21/0271 (2013.01); H01L 21/0273 (2013.01); H01L 21/02118 (2013.01); H01L 21/02318 (2013.01); H01L 21/033 (2013.01); H01L 21/0337 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01);
Abstract

According to one embodiment, a pattern forming method includes forming a resist pattern on an under-layer, forming a recessed portion in the under-layer by etching the under-layer using the resist pattern as a mask, slimming the resist pattern, forming a neutral layer having an affinity for first and second polymers on a region of the under-layer not covered with the slimmed resist pattern, forming a block copolymer film containing the first polymer and the second polymer on the slimmed resist pattern and the neutral layer, and forming a microphase separation pattern comprising a first portion formed of the first polymer and a second portion formed of the second polymer by applying microphase separation processing to the block copolymer film.

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