The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Feb. 05, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kazuhiro Matsuo, Yokkaichi, JP;

Fumiki Aiso, Kuwana, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/4412 (2013.01); C23C 16/45544 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01);
Abstract

In one embodiment, a semiconductor manufacturing system includes a film forming apparatus configured to form a film on a surface of a wafer. The system further includes a gas supply module configured to supply at least a type of source gas for the film into the film forming apparatus. The system further includes a measurement module configured to measure a discharge amount of an exhaust gas from the film forming apparatus. The system further includes a controller configured to calculate a value corresponding to a surface area of the wafer based on the discharge amount of the exhaust gas from the film forming apparatus, and to control a supply amount of the source gas to the film forming apparatus based on the value corresponding to the surface area of the wafer.


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