The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jul. 08, 2014
Applicant:
Carnegie Institution of Washington, Washington, DC (US);
Inventors:
Timothy A. Strobel, Washington, DC (US);
Duck Young Kim, Washington, DC (US);
Oleksandr O. Kurakevych, Washington, DC (US);
Assignee:
CARNEGIE INSTITUTION OF WASHINGTON, Washington, DC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C01B 33/00 (2006.01); C01B 33/021 (2006.01); C01B 33/06 (2006.01);
U.S. Cl.
CPC ...
C01B 33/02 (2013.01); C01B 33/00 (2013.01); C01B 33/021 (2013.01); C01B 33/06 (2013.01);
Abstract
The invention relates to a new phase of silicon, Si, and a method of making the same. Sihas a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula NaSiand a method of making the same. N4Simay be used as a precursor to make Si.