The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Jan. 31, 2012
Applicants:

Yusuke Kitsukawa, Tokyo, JP;

Takuya Suzuki, Tokyo, JP;

Tomoyuki Unno, Tokyo, JP;

Inventors:

Yusuke Kitsukawa, Tokyo, JP;

Takuya Suzuki, Tokyo, JP;

Tomoyuki Unno, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/11 (2006.01); H05K 1/14 (2006.01); H05K 9/00 (2006.01); H01L 23/04 (2006.01); H01L 23/552 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H05K 9/006 (2013.01); H01L 23/04 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15321 (2013.01);
Abstract

A high-frequency package includes a first dielectric substrate having a signal line and a grounding conductor provided on a back side, a high-frequency element connected to a back side of the first dielectric substrate with a first connection conductor therebetween, a second dielectric substrate having a signal line and a grounding conductor provided on a front side facing the back side with the high-frequency element therebetween, and second connection conductors that are arranged so as to surround the high-frequency element and connect the grounding conductor on the back side of the first dielectric substrate and the grounding conductor on the front side of the second dielectric substrate. In the high-frequency package, a dielectric space surrounded by a conductor pattern is formed in the front side of the second dielectric substrate under the high-frequency element.


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