The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Oct. 28, 2016
The Research Foundation for the State University of New York, Amherst, NY (US);
The Board of Regents of the University of Texas System, Austin, TX (US);
Jonathan P. Bird, Buffalo, NY (US);
Andrew Marshall, Dallas, TX (US);
The Research Foundation for the State University of New York, Amherst, NY (US);
Board of Regents, the University of Texas System, Austin, TX (US);
Abstract
A configurable ME MTJ XOR/XNOR gate includes an insulator separating a top and bottom FM layer, a top ME layer with a first boundary magnetism at an interface of the top ME layer and the top FM layer, a bottom ME layer with a second boundary magnetism at an interface of the bottom ME layer and the bottom FM layer, and a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer. A voltage between the top electrode and FM layer is a first input, a voltage between the bottom electrode and FM layer is a second input, and a resistance between the top and bottom FM layer is indicative of the XOR or the XNOR of the inputs. The configurable ME MTJ XOR/XNOR gate has reduced energy consumption, smaller area, faster switching times, is non-volatile, and is configurable.