The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Sep. 25, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

John Eric Kunz, Jr., Allen, TX (US);

Jonathan Scott Brodsky, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/00 (2006.01); H02H 9/04 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H02H 9/048 (2013.01); H01L 27/0248 (2013.01); H02H 9/04 (2013.01); H02H 9/043 (2013.01);
Abstract

An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.


Find Patent Forward Citations

Kunz, Jr., John. (2017). Shut-off circuits for latched active esd fet (U.S. Patent No. 9692229). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9692229

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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