The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Mar. 01, 2012
High-concentration active doping in semiconductors and semiconductor devices produced by such doping
Jonathan T. Bessette, Montpelier, VT (US);
Yan Cai, Stoughton, MA (US);
Rodolfo E. Camacho-aguilera, Portland, OR (US);
Jifeng Liu, Hanover, NH (US);
Lionel Kimerling, Concord, MA (US);
Jurgen Michel, Arlington, MA (US);
Jonathan T. Bessette, Montpelier, VT (US);
Yan Cai, Stoughton, MA (US);
Rodolfo E. Camacho-Aguilera, Portland, OR (US);
Jifeng Liu, Hanover, NH (US);
Lionel Kimerling, Concord, MA (US);
Jurgen Michel, Arlington, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.