The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Mar. 11, 2016
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Atsuo Michiue, Anan, JP;

Yasuhiro Kawata, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/323 (2006.01); H01S 5/042 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/0425 (2013.01); H01S 5/32341 (2013.01); H01S 5/0213 (2013.01); H01S 5/0218 (2013.01); H01S 5/2205 (2013.01); H01S 2301/176 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes: forming a ridge on a semiconductor layer stacked on a substrate by removing a part of the semiconductor layer; forming an electrode on the ridge so as to have a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge; forming a protective film disposed on each side of the ridge to cover a region from the side surface of the ridge to the sloped surface of the sloped portion of the electrode; and forming a pad electrode at least on an upper surface of the electrode and the protective film.


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