The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Jan. 24, 2014
Applicant:
Fujifilm Corporation, Tokyo, JP;
Inventor:
Mitsumasa Hamano, Kanagawa-ken, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/44 (2006.01); C23C 14/26 (2006.01); H01L 51/00 (2006.01); C01B 31/02 (2006.01); H01L 51/42 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01L 51/44 (2013.01); C01B 31/0213 (2013.01); C23C 14/26 (2013.01); H01L 51/001 (2013.01); H01L 51/0002 (2013.01); H01L 27/307 (2013.01); H01L 51/4246 (2013.01); H01L 51/4273 (2013.01);
Abstract
In the photoelectric conversion device having a pair of electrodes and a light receiving layer sandwiched between the pair of electrodes and including at least a photoelectric conversion layer, at least a part of the light receiving layer includes a fullerene or a fullerene derivative deposited using a vapor deposition material of a plurality of particles or a compact formed of the particles consisting primarily of the fullerene or fullerene derivative with an average particle size expressed as D50% of 50 to 300 μm.