The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

May. 08, 2013
Applicants:

Thomas Richter, Regensburg, DE;

Andreas Lenk, Bannewitz ot Possendorf, DE;

Claus Zumstrull, Regenstauf, DE;

Inventors:

Thomas Richter, Regensburg, DE;

Andreas Lenk, Bannewitz ot Possendorf, DE;

Claus Zumstrull, Regenstauf, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/083 (2006.01); H01L 41/29 (2013.01); H01L 41/047 (2006.01); H01L 41/293 (2013.01); H01L 41/335 (2013.01); B32B 37/12 (2006.01); B32B 38/00 (2006.01); H01L 41/277 (2013.01); H01L 41/297 (2013.01);
U.S. Cl.
CPC ...
H01L 41/083 (2013.01); B32B 37/12 (2013.01); B32B 38/0008 (2013.01); B32B 38/0012 (2013.01); H01L 41/0471 (2013.01); H01L 41/0472 (2013.01); H01L 41/277 (2013.01); H01L 41/293 (2013.01); H01L 41/297 (2013.01); H01L 41/335 (2013.01); B32B 2307/20 (2013.01); B32B 2310/0843 (2013.01); B32B 2310/0875 (2013.01); B32B 2311/00 (2013.01); B32B 2457/00 (2013.01);
Abstract

A method is provided for making electrical contact with an electronic component in the form of a stack formed from a plurality of material layers, which react upon application of an electric field, and a plurality of electrode layers, wherein each material layer is arranged between two of the electrode layers. An insulation structure is generated on at least one stack circumferential region of the stack, which exposes each second electrode layer of the at least one stack circumferential region for electrical contact to be made. Also, a contact-making structure is applied to the at least one stack circumferential region which is provided with the insulation structure. Before the step of generating the contact-making structure, the material layers are partially removed by a material-removing method such that the electrode layers are exposed close to the surface.


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