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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9691938 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Dec. 21, 2015

Advanced electronic device structures using semiconductor structures and superlattices

Applicant:

The Silanna Group Pty Ltd., Eight Mile Plains, Queensland, AU;

Inventors:

Petar Atanackovic, Henley Beach South, AU;

Matthew Godfrey, Sydney, AU;

Assignee:

The Silanna Group Pty Ltd, Eight Mile Plains, Queensland, AU;

Attorney:

The Mueller Law Office, P.C.

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 27/15 (2006.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0242 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02507 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01);
Abstract

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

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