The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Mar. 24, 2015
Applicant:

University of Houston System, Houston, TX (US);

Inventors:

Abdelhak Bensaoula, Houston, TX (US);

David Starikov, Houston, TX (US);

Rajeev Pillai, Manvel, TX (US);

Assignee:

UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 29/06 (2006.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 29/20 (2006.01); H01L 31/107 (2006.01); H01L 27/144 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 27/1446 (2013.01); H01L 31/03044 (2013.01); H01L 31/035236 (2013.01); H01L 31/1856 (2013.01);
Abstract

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.


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